Part Number : K10A60D
Function : Silicon N Channel MOSFET, Transistor
Package : TO-220SIS Type
Maker : Toshiba
Image : 
Description :
• Low drain-source ON-resistance: RDS (ON)= 0.58 Ω(typ.)
• High forward transfer admittance: |Yfs| = 6.0 S (typ.)
• Low leakage current: IDSS= 10 μA(max)(VDS= 600 V)
• Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
Applications :
Switching Regulator
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 600 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 10 A
4. Channel dissipation : Pd = 45 W
5. Avalanche energy : Ear = 4.5 mJ
6. Channel temperature : Tch = 150 °C
7. Storage temperature : Tstg = -55 to +150 °C
Datasheet PDF Download : 
Others datasheet of same file : K10A60 , K10A60D, TK10A60D,
K10A600, TK10A600
