Part Number : K3569

Function : Silicon N Channel MOSFET

Package : TO-220SIS type

Maker : Toshiba

Pinouts :
K3569 datasheet

Description :

•  Low drain-source ON resistance: RDS (ON)= 0.54Ω(typ.)

•  High forward transfer admittance: |Yfs| = 8.5S (typ.)

•  Low leakage current: IDSS= 100 μA (VDS= 600 V)

•  Enhancement-mode: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 600 V

2. Gate to source voltage : VGSS = ± 600 V

3. Drain current : ID = 10 A

4. Avalanche energy : Ear = 4.5 mJ

5. Channel temperature : Tch =  150 °C

 

6.. Storage temperature : Tstg = -55 to +150 °C



Applications :

Switching Regulator 


Datasheet PDF Download :
K3569 pdf

Others datasheet of same file : 2SK3569

 

2021/11/18 11:47 2021/11/18 11:47

Posted