Part Number : K3569
Function : Silicon N Channel MOSFET
Package : TO-220SIS type
Maker : Toshiba
Image and Pinouts :
Description
• Low drain-source ON resistance: RDS (ON)= 0.54Ω(typ.)
• High forward transfer admittance: |Yfs| = 8.5S (typ.)
• Low leakage current: IDSS= 100 μA (VDS= 600 V)
• Enhancement-mode: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 600 V
2. Gate to source voltage : VGSS = ± 600 V
3. Drain current : ID = 10 A
4. Avalanche energy : Ear = 4.5 mJ
5. Channel temperature : Tch = 150 °C
6.. Storage temperature : Tstg = -55 to +150 °C
Applications :
Switching Regulator
Datasheet PDF Download :
Others datasheet of same file : 2SK3569
