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Description

• Low drain-source ON-resistance: RDS (ON)= 0.58 Ω(typ.)

• High forward transfer admittance: |Yfs| = 6.0 S (typ.)

• Low leakage current: IDSS= 10 μA(max)(VDS= 600 V)

• Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

Applications :

Switching Regulator 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 600 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 10 A

4. Channel dissipation : Pd =  45 W

5. Avalanche energy : Ear = 4.5 mJ

6. Channel temperature : Tch =  150 °C

7. Storage temperature : Tstg = -55 to +150 °C