Part Number : RJP63K2DPP-M0
Function : 630V, Silicon N Channel IGBT, Transistor
Package : TO-220FL Type
Maker : Renesas Electronics
Pinouts : 
Description :
1. Trench gate and thin wafer technology (G6H-II series)
2. Low collector to emitter saturation voltage: VCE(sat)= 1.9 V typ
3. High speed switching: tr= 60 ns typ, tf= 200 ns typ.
4. Low leak current: ICES= 1 uA max
5. Isolated package TO-220FL
Applications :
High Speed Power Switching
Datasheet PDF Download :
Others datasheet of same file : RJP63K2, RJP63K2DPP