Part Number : RJP63F3DPP-M0
Function : 40A, 630V, Silicon N Channel IGBT
Package : TO-220FL Type
Maker : Renesas Electronics
Pinouts : 
Description :
• Trench gate and thin wafer technology (G6H series)
• Low collector to emitter saturation voltage VCE(sat)= 1.7 V typ
• High speed switching tf = 100 ns typ
• Low leak current ICES= 1 μA max
• Isolated package TO-220FL
Applications :
High Speed Power Switching
Datasheet PDF Download : 
Others datasheet of same file :
RJP63F, RJP63F3, RJP63F3DPP