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RJP63K2DPP-M0#T2
Insulated-Gate Bipolar Transistors (IGBT)

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Description

:

1.  Trench gate and thin wafer technology (G6H-II series)
2.  Low collector to emitter saturation voltage: VCE(sat)= 1.9 V typ
3.  High speed switching: tr= 60 ns typ, tf= 200 ns typ.
4.  Low leak current: ICES= 1 uA max
5.  Isolated package TO-220FL

 

Applications : 

High Speed Power Switching



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Related Part Number


RJU6052SDPD  |  RJR24FX102M  

RJP63K2DPP-M0  |  RJP63K2DPK-M0  

RJP63F3DPP-M0  |  RJP6065DPM  


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