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RJP63F3DPP-M0#T2
Insulated-Gate Bipolar Transistors (IGBT)

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Description

:

•  Trench gate and thin wafer technology (G6H series)

•  Low collector to emitter saturation voltage  VCE(sat)= 1.7 V typ

•  High speed switching tf = 100 ns typ

•  Low leak current  ICES= 1 μA max

•  Isolated package TO-220FL

Applications :

High Speed Power Switching



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Related Part Number


RJU6052SDPD  |  RJR24FX102M  

RJP63K2DPP-M0  |  RJP63K2DPK-M0  

RJP63F3DPP-M0  |  RJP6065DPM  


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