Part Number : RJP30H1DPP-M0
Function : 360V, 30A, Silicon N Channel IGBT
Package : TO220FL type
Maker : Renesas Electronics
Pinouts : 
Description :
1. Trench gate and thin wafer technology (G6H-II series)
2. High speed switching: tr =80 ns typ., tf = 150 ns typ.
3. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.
4. Low leak current: ICES= 1 uA max.
5. Isolated package TO-220FL
Applications :
High speed power switching
Datasheet PDF Download : 
Others datasheet of same file :
RJP30H1, RJP30H1DPPM0, RJP30H1DPP
