Part Number : RJP30H1DPP-M0

Function : 360V, 30A, Silicon N Channel IGBT 

Package : TO220FL type

Maker : Renesas Electronics

Pinouts :
RJP30H1DPP-M0 datasheet

Description :

1. Trench gate and thin wafer technology (G6H-II series)

2.  High speed switching: tr =80 ns typ., tf = 150 ns typ.

3.  Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.

4.  Low leak current: ICES= 1 uA max.

5.  Isolated package  TO-220FL

Applications : 

High speed power switching


Datasheet PDF Download :
RJP30H1DPP-M0 pdf

Others datasheet of same file :

RJP30H1, RJP30H1DPPM0, RJP30H1DPP

2021/08/06 08:09 2021/08/06 08:09

Posted