Part Number : RJP30H2DPK-M0
Function : 360V, 35A, Silicon N Channel IGBT
Package : TO-3P Type
Maker : Renesas Electronics
Pinouts : 
Description :
1. Trench gate and thin wafer technology (G6H-II series)
2. Low collector to emitter saturation voltage: VCE(sat)= 1.4 V typ
3. High speed switching: tf = 100 ns typ, tf = 180 ns typ
4. Low leak current: ICES= 1 uA max
Applications :
1. High speed power switching
Datasheet PDF Download : 
Others datasheet of same file :
RJP30H2DPK, RJP30H2, RJP30H2DPK-M0-T2
