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RJP30H1DPP-M0#T2
Insulated-Gate Bipolar Transistors (IGBT)

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Description

:

1. Trench gate and thin wafer technology (G6H-II series)

2.  High speed switching: tr =80 ns typ., tf = 150 ns typ.

3.  Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.

4.  Low leak current: ICES= 1 uA max.

5.  Isolated package  TO-220FL

Applications : 

High speed power switching



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