Part Number : RJH30H1DPP-M0-T2
Function : 360V, 30A, Silicon N Channel IGBT
Package : TO-220FL Type
Maker : Renesas Electronics
Pinouts : 
Description :
1. Trench gate and thin wafer technology (G6H-II series)
2. High speed switching: tr =80 ns typ., tf = 150 ns typ.
3. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.
4. Low leak current: ICES= 1 A max.
5. Built-in Fast Recovery Diode: VF= 1.4 V typ., trr = 23 ns typ.
6. Isolated package: TO-220FL
Applications :
High speed power switching
Datasheet PDF Download : 
Others datasheet of same file :
RJH30H1DPP, RJH30H1DPP-M0, RJH30H1
