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RJH30H1DPP-M0#T2
Insulated-Gate Bipolar Transistors (IGBT)

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Description

:

1. Trench gate and thin wafer technology (G6H-II series)

2. High speed switching: tr =80 ns typ., tf = 150 ns typ.

3. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.

4. Low leak current: ICES= 1 A max.

5. Built-in Fast Recovery Diode: VF= 1.4 V typ., trr = 23 ns typ.

6. Isolated package: TO-220FL

Applications : 

High speed power switching 



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