Part Number : RJH30E2 , RJP30E2DPP-M0
Description : N-Channel, 360V, IGBT
Package : TO-220FL Type
Manufacture : Renesas
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RJH30E2
Absolute maximum ratings:
(1) Collector to emitter voltage VCES: 360 V
(2) Gate to emitter voltage VGES: ±30 V
(3) Collector current IC: 30 A
(4 )Collector peak current ic(peak): 200 A
RJH30E2 features:
(1) Trench gate and thin wafer technology (G6H-II series)
(2) High speed switching: tr =80 ns typ., tf = 150 ns typ.
(3) Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.
(4) Low leak current: ICES = 1 mA max.
(5) Built-in Fast Recovery Diode: VF = 1.4 V typ., trr = 23 ns typ.
(6)Isolated package: TO-220FL.
Datasheet PDF Download :
Reference Datasheet