PDF RJH30E2 Download

Description

Package : TO-220FL Type

Manufacture : Renesas

Image

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Absolute maximum ratings:

(1) Collector to emitter voltage VCES: 360 V

(2) Gate to emitter voltage VGES: ±30 V

(3) Collector current IC: 30 A

(4 )Collector peak current ic(peak): 200 A

RJH30E2 features:

(1) Trench gate and thin wafer technology (G6H-II series)

(2) High speed switching: tr =80 ns typ., tf = 150 ns typ.

(3) Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.

(4) Low leak current: ICES = 1 mA max.

(5) Built-in Fast Recovery Diode: VF = 1.4 V typ., trr = 23 ns typ.

(6)Isolated package: TO-220FL.
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