Part Number : K170
Function : - 40V, N-Channel, MOSFET, Transistor
Package : TO-92 Type
Maker : Toshiba
Pinouts : 
Description :
Silicon N Channel Junction Type Field Effect Transistor
Features :
• Recommended for first stages of EQ and M.C. head amplifiers.
• High breakdown voltage: VGDS= −40 V
Absolute Maximum Ratings (Ta = 25°C)
1. Gate-drain voltage : VGDS = - 40 V
2. Gate current : IG = 10 mA
3. Drain power dissipation : PD = 400 mW
4. Junction temperature : Tj = 125 °C
5. Storage temperature range : Tstg = −55~125 °C
Applications :
1. Low Noise Audio Amplifier
Others datasheet of same file : 2SK170
Datasheet PDF Download :
