Part Number : K3878

Function : 900V, 9A, Field Effect Transistor ( MOSFET, Transistor ) 

Package : TO-3P Type

Maker : Toshiba

Pinouts :
K3878 datasheet

Description :

1. Low drain-source ON-resistance: RDS (ON)= 1.0 Ω(typ.)

2. High forward transfer admittance: ⎪Yfs⎪= 7.0 S (typ.)

3. Low leakage current: IDSS= 100 μA (max) (VDS= 720 V)

4. Enhancement model: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS =  900 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 9 A

4. Drain power dissipation (Tc = 25°C) : Pd =  150 W

5. Avalanche energy : Ear = 15 mJ 

6. Channel temperature : Tch =  150 °C

7. Storage temperature : Tstg = -55 to +150 °C

Applications :

Switching Regulator 


Datasheet PDF Download :
K3878 pdf

Others datasheet of same file : 2SK3878

 



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2021/12/01 18:32 2021/12/01 18:32

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