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Description

Features : 

• Low drain-source ON-resistance: RDS (ON)= 1.0 Ω(typ.)

• High forward transfer admittance: ⎪Yfs⎪= 7.0 S (typ.)

• Low leakage current: IDSS= 100 μA (max) (VDS= 720 V)

• Enhancement model: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 900 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 9 A

4. Drain Power Dissipation : Pd = 150 W

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Applications :

Switching Regulator