Part Number : K3570

Function : 20V, SWITCHING N-CHANNEL POWER MOSFET, TRANSISTOR

Package : TO-220AB, TO-262, TO-263

Maker : NEC , Renesas Technology

Image :
K3570 datasheet

Description :

The K3570 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

Features

• 4.5V drive available.

• Low on-state resistance, RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 24 A)

• Low gate charge QG = 23 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 48 A)

• Built-in gate protection diode

• Surface mount device available

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 20 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID = 48 A

4. Total Power Dissipation : Pd = 1.5 W

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -55 to +150 °C

 


Datasheet PDF Download :
K3570 pdf

Others datasheet of same file : 2SK3570, 2SK3570-S, 2SK3570-Z, 2SK3570-ZK
2021/10/06 09:43 2021/10/06 09:43

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