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Description

The K3570 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

Features

• 4.5V drive available.

• Low on-state resistance, RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 24 A)

• Low gate charge QG = 23 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 48 A)

• Built-in gate protection diode

• Surface mount device available

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 20 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID = 48 A

4. Total Power Dissipation : Pd = 1.5 W

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -55 to +150 °C