Part Number : K2930
Function : 60V, 35A, N-Ch, MOSFET, Transistor
Package : TO-220AB Type
Maker : Hitachi , Renesas Electronics
Pinouts : 
Description :
Silicon N Channel MOSFET
Features :
• Low on-resistance : RDS=0.020 Ωtyp.
• High speed switching
• 4V gate drive device can be driven from 5V source
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 60 V
2. Gate to source voltage : VGSS = ± 20 V
3. Drain current : ID = 35 A
4. Channel dissipation : Pch = 50 W
5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C
Applications
• High Speed Power Switching
Datasheet PDF Download : 
Others datasheet of same file : 2SK2930
