Part Number : K3296
Function : 20V, 35A, MOS FIELD EFFECT TRANSISTOR
Package : TO-220AB, TO-263 Type
Maker : NEC , Renesas Technology
Pinouts : 
Description :
The K3296 is N-Channel MOSFET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
Features :
1. 4.5 V drive available
2. Low on-state resistance : RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 18 A)
3 Low gate charge : QG = 30 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V)
4. Built-in gate protection diode
5. Surface mount device available
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 20 V
2. Gate to source voltage : VGSS = ± 20 V
3. Drain current : ID = 35 A
4. Total Power Dissipation : Pd = 1.5 W
5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C
Datasheet PDF Download : 
Others datasheet of same file : 2SK3296, 2SK3296-S, 2SK3296-ZJ, 2SK3296-ZK
