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Description

The K3296 is N-Channel MOSFET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

Features : 

1. 4.5 V drive available

2. Low on-state resistance : RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 18 A)

3 Low gate charge : QG = 30 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V)

4. Built-in gate protection diode

5. Surface mount device available

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 20 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID = 35 A

4. Total Power Dissipation : Pd = 1.5 W

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Description

The K3296 is N-Channel MOSFET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

Features : 

1. 4.5 V drive available

2. Low on-state resistance : RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 18 A)

3 Low gate charge : QG = 30 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V)

4. Built-in gate protection diode

5. Surface mount device available

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 20 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID = 35 A

4. Total Power Dissipation : Pd = 1.5 W

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -55 to +150 °C