Part Number : K2529
Function : 60V, 50A, N-Ch, MOSFET, Transistor
Package : TO-220CFM Type
Maker : Hitachi , Renesas Electronics
Pinouts : 
Description :
Silicon N-Channel MOSFET
Features
• Low on-resistance
• RDS(on)= 7 mΩtyp.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 60 V
2. Gate to source voltage : VGSS = ± 20 V
3. Drain current : ID = 50 A
4. Channel dissipation : Pch = 35 W
5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C
Application :
1. High speed power switching
Datasheet PDF Download : 
Others datasheet of same file : 2SK2529
