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Description

:

Silicon N Channel MOSFET

Features

•  Low on-resistance
•  RDS(on)= 7 mΩtyp.
•  High speed switching
•  4 V gate drive device can be driven from 5 V source

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 60 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID =  50 A

4. Allowable Power Dissipation : Pd = 35 W

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -55 to +150 °C




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Related Part Number


K2996  |  K2985  

K2983  |  K2959  

K2957  |  K2956  


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