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Description

Silicon N Channel Junction Type Field Effect Transistor

Features : 

•  Recommended for first stages of EQ and M.C. head amplifiers.

•  High breakdown voltage: VGDS= −40 V

Absolute Maximum Ratings (Ta = 25°C)

1. Gate-drain voltage : VGDS = - 40 V

2. Gate current : IG = 10 mA

3. Drain power dissipation : PD = 400 mW

4. Junction temperature : Tj = 125 °C

5. Storage temperature range : Tstg = −55~125 °C

Applications :

1. Low Noise Audio Amplifier