Part Number : K10A50D

Function : Field Effect Transistor, Silicon N Channel MOSFET

Package : TO-220 Type

Maker : Toshiba

Pinouts :
K10A50D datasheet

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Description : 

Official Site : http://www.semicon.toshiba.co.jp/info/lookup.jsp?pid=TK10A50D&lang=en
 

Features : 

•  Low drain-source ON-resistance: RDS (ON)= 0.62 Ω(typ.)

•  High forward transfer admittance: ⎪Yfs⎪= 5.0 S (typ.)

•  Low leakage current: IDSS= 10 μA (max) (VDS= 500 V)

•  Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 500 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 10 A

4. Avalanche energy : Ear = 264 mJ

 

 


Datasheet PDF Download :
K10A50D pdf

Others datasheet of same file : K10A500, TK10A50D
2021/11/11 17:48 2021/11/11 17:48

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