Part Number : K10A50D
Function : Field Effect Transistor, Silicon N Channel MOSFET
Package : TO-220 Type
Maker : Toshiba
Pinouts : 
Image
Description :
Official Site : http://www.semicon.toshiba.co.jp/info/lookup.jsp?pid=TK10A50D&lang=en
Features :
• Low drain-source ON-resistance: RDS (ON)= 0.62 Ω(typ.)
• High forward transfer admittance: ⎪Yfs⎪= 5.0 S (typ.)
• Low leakage current: IDSS= 10 μA (max) (VDS= 500 V)
• Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 500 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 10 A
4. Avalanche energy : Ear = 264 mJ
Datasheet PDF Download :
Others datasheet of same file : K10A500, TK10A50D
