Description:Official Site : http://www.semicon.toshiba.co.jp/info/lookup.jsp?pid=TK10A50D&lang=en Features : • Low drain-source ON-resistance: RDS (ON)= 0.62 Ω(typ.) • High forward transfer admittance: ⎪Yfs⎪= 5.0 S (typ.) • Low leakage current: IDSS= 10 μA (max) (VDS= 500 V) • Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA) Absolute Maximum Ratings (Ta = 25°C) 1. Drain to source voltage : VDSS = 500 V 2. Gate to source voltage : VGSS = ± 30 V 3. Drain current : ID = 10 A 4. Avalanche energy : Ear = 264 mJ
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Related Part Number |
K1933 | K1923 K1908 | K1904 K1895 | K1891 |