Part Number : FQPF2N90
Function : 900V, N-Channel MOSFET, Transistor
Package : TO-220F Type
Maker : Fairchild Semiconductor
Pinouts : 
Description :
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planr stripe, DMOS technology.
Features
1. 1.4A, 900V, Rds(on) = 7.2Ohm @ Vgs =10V
2. Low gate charge (typical 12 nC)
3. Low Crss (typical 5.5 pF)
4. Fast switching
5. 100% avalanche tested
6. Improved dv/dt capability
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 900 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 1.4 A
4. Channel temperature : Tch = 150 °C
5. Storage temperature : Tstg = -55 to +150 °C
Datasheet PDF Download :
Others datasheet of same file : FQPF2N-90