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Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planr stripe, DMOS technology.

Features

1. 1.4A, 900V, Rds(on) = 7.2Ohm @ Vgs =10V

2. Low gate charge (typical 12 nC)

3. Low Crss (typical 5.5 pF)

4. Fast switching

5. 100% avalanche tested

6. Improved dv/dt capability

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 900 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 1.4 A

4. Channel temperature : Tch =  150 °C

5. Storage temperature : Tstg = -55 to +150 °C

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planr stripe, DMOS technology.

Features

1. 1.4A, 900V, Rds(on) = 7.2Ohm @ Vgs =10V

2. Low gate charge (typical 12 nC)

3. Low Crss (typical 5.5 pF)

4. Fast switching

5. 100% avalanche tested

6. Improved dv/dt capability

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 900 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 1.4 A

4. Channel temperature : Tch =  150 °C

5. Storage temperature : Tstg = -55 to +150 °C