Part Number : K3878
Function : 9A, 900V, Field Effect Transistor, MOSFET
Package : TO-3PN type
Maker : Toshiba
Pinouts : 
Description :
Silicon N-Channel MOS Type FET, Transistor
Features :
• Low drain-source ON-resistance: RDS (ON)= 1.0 Ω(typ.)
• High forward transfer admittance: ⎪Yfs⎪= 7.0 S (typ.)
• Low leakage current: IDSS= 100 μA (max) (VDS= 720 V)
• Enhancement model: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 900 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 9 A
4. Drain Power Dissipation : Pd = 150 W
5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C
Applications :
Switching Regulator
Datasheet PDF Download : 
Others datasheet of same file : 2SK3878