Part Number : 2SK2610
Function : 900V, 5A, MOSFET, Transistor
Maker : Toshiba
Pinouts : 
Description :
Silicon N Channel MOSFET
Features :
1. Low drain−source ON resistance : RDS (ON)= 2.3 Ω(typ.)
2. High forward transfer admittance : |Yfs|=4.4 S (typ.)
3. Low leakage current : IDSS= 100 µA (max) (VDS= 720 V)
4. Enhancement−mode : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 900 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 5 A
4. Single Pulse Avalanche Energy : Eas = 595 mJ
5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C
Datasheet PDF Download :
Others datasheet of same file : K2610
