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Description

1. Low drain−source ON resistance  : RDS (ON)= 2.3 Ω(typ.)

2. High forward transfer admittance  : |Yfs|=4.4 S (typ.)

3. Low leakage current  : IDSS= 100 µA (max) (VDS= 720 V)

4. Enhancement−mode : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 900 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID =  5 A

4. Single Pulse Avalanche Energy : Eas = 595 mJ

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -55 to +150 °C