Part Number : 2SC3356
Marking : R25
Function : 12V, 100mA, NPN Transistor
Maker : NEC , Renesas Technology
Image : 
Description :
The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic.
Pinouts :
Features :
1. Low Noise and High Gain
: NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
2. High Power Gain
: MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage : Vcbo = 20 V
2. Collector to Emitter Voltage : Vceo = 12 V
3. Emitter to Base Voltage : Vebo = 3 V
4. Collector Current : Ic = 100 mA
5. Total Dissipation : Pc = 200 mW
6. Junction Temperature : Tj = 150°C
7. Storage Temperatue : Tsg = -65 ~ +150°C
Applications :
1. Low noise amplifier at VHF, UHF and CATV band
Datasheet PDF Download : 
Others datasheet of same file : C3356
