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Description

The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic.

Pinouts : 

Features : 

1. Low Noise and High Gain

: NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz

2. High Power Gain

: MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 20 V

2. Collector to Emitter Voltage : Vceo = 12 V

3. Emitter to Base Voltage : Vebo = 3 V

4. Collector Current : Ic = 100 mA

5. Total Dissipation : Pc = 200 mW

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -65 ~ +150°C

Applications :

1. Low noise amplifier at VHF, UHF and CATV band