Part Number : WFD830
Function : Silicon N-Channel MOSFET
Package : DPAK Type
Maker : WinSemi Microelectronics
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Description :
This Power MOSFET is produced using Winsemi ’ s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.
Features
1. 4.5A, 500V, RDS(on)(Max 1.5Ω) @VGS=10V
2. Ultra-low Gate Charge(Typical 32nC)
3. Fast Switching Capability
4. 100%Avalanche Tested
5. Maximum Junction Temperature Range(150℃)
Datasheet PDF Download : 
Others datasheet of same file : WFD-830