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Description

This Power MOSFET is produced using Winsemi ’ s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.

Features

1. 4.5A, 500V, RDS(on)(Max 1.5Ω) @VGS=10V

2. Ultra-low Gate Charge(Typical 32nC)

3. Fast Switching Capability

4. 100%Avalanche Tested

5. Maximum Junction Temperature Range(150℃)