Part Number : TN2101K1
Function : 15V, N-Channel Enhancement-Mode Vertical DMOS FET
Package: TO-236AB Type
Maker : Supertex Inc
Pinouts : 
Description :
These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.
This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.
Features
1. Free from secondary breakdown
2. Low power drive requirement
3. Ease of paralleling
4. Low CISS and fast switching speeds
5. Excellent thermal stability
6. Integral Source-Drain diode
7. High input impedance and high gain
8. Complementary N- and P-channel devices
Datasheet PDF Download :
Others datasheet of same file : TN2101K, TN2101ND
2N7002LT1