Part Number : TK5A50D
Function : 500V, 5A, Silicon N Channel MOS Type Field Effect Transistor
Package : TO-220 Type
Maker : Toshiba
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Description :
Search Part number : TK5A500 -> Correct Part number : TK5A50D
• Low drain-source ON-resistance: RDS (ON)= 1.3 Ω(typ.)
• High forward transfer admittance: ⎪Yfs⎪= 3.0 S (typ.)
• Low leakage current: IDSS= 10 μA (max) (VDS= 500 V)
• Enhancement mode: Vth= 2.4 to 4.4 V (VDS= 10 V, ID= 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 500 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 5 A
4. Drain power dissipation (Tc = 25°C) : Pd = 35 W
5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C
Datasheet PDF Download :
Others datasheet of same file : K5A500, K5A50D