Part Number : TK5A50D

Function : 500V, 5A, Silicon N Channel MOS Type Field Effect Transistor

Package : TO-220 Type

Maker : Toshiba

Image :
TK5A50D datasheet

Description :

Search Part number : TK5A500 ->  Correct Part number : TK5A50D

• Low drain-source ON-resistance: RDS (ON)= 1.3 Ω(typ.)

• High forward transfer admittance: ⎪Yfs⎪= 3.0 S (typ.)

• Low leakage current: IDSS= 10 μA (max) (VDS= 500 V)

• Enhancement mode: Vth= 2.4 to 4.4 V (VDS= 10 V, ID= 1 mA)


Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 500 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID =  5 A

4. Drain power dissipation (Tc = 25°C) : Pd = 35 W

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -55 to +150 °C




Datasheet PDF Download :
C6090 pdf


Others datasheet of same file : K5A500, K5A50D
2021/09/29 11:45 2021/09/29 11:45

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