Part Number : TK30A06J3A
Function : Silicon N Channel MOS Type (U−MOSⅢ)
Package : TO-220 Type
Maker : Toshiba
Pinouts : 
Description :
1. Low drain-source ON-resistance: RDS (ON)= 19 mΩ(typ.)
2. High forward transfer admittance: |Yfs| = 34 S (typ.)
3. Low leakage current: IDSS= 10 μA (max) (VDS= 60 V)
4. Enhancement mode: Vth= 1.3 to 2.5 V (VDS= 10 V, ID= 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 60 V
2. Gate to source voltage : VGSS = ± 20 V
3. Drain current : ID = 30 A
4. Channel dissipation : Pch = 25 W
5. Avalanche energy : Ear = 2.5 mJ
6. Channel temperature : Tch = 150 °C
7. Storage temperature : Tstg = -55 to +150 °C
Datasheet PDF Download :
Others datasheet of same file : K30A06J3, TK30A06J3
