PDF TK30A06J3A Download

Description

1. Low drain-source ON-resistance: RDS (ON)= 19 mΩ(typ.)

2.  High forward transfer admittance: |Yfs| = 34 S (typ.)

3. Low leakage current: IDSS= 10 μA (max) (VDS= 60 V)

4. Enhancement mode: Vth= 1.3 to 2.5 V (VDS= 10 V, ID= 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 60 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID =  30 A

4. Channel dissipation : Pch =  25 W

5. Avalanche energy : Ear = 2.5 mJ

6. Channel temperature : Tch =  150 °C

7. Storage temperature : Tstg = -55 to +150 °C