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These silicon N-channel Enhanced VDMOSFETs are obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanchee nergy.

 

1. Fast Switching

2. Low On Resistance (Rdson≤0.45Ω)

3. Low Gate Charge (Typical:61nC)

4. Low Reverse Transfer Capacitances (Typical:20pF)

5. 100% Single Pulse Avalanche Energy Test

This is 600V, MOSFET.

ThesesiliconN-channelEnhancedVDMOSFETsareobtainedbytheself-alignedplanarTechnologywhichreducetheconductionloss,improveswitchingperformanceandenhancetheavalancheenergy.ThepackageformisTO-220F.WhichaccordswiththeRoHSstandard.2FeaturesFastSwitchingLowOnResistance(Rdson0.45Ω)LowGateCharge(Typical:61nC)LowReverseTransferCapacitances(Typical:20pF)100%SinglePulseAvalancheEnergyTest

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ThesesiliconN-channelEnhancedVDMOSFETsareobtainedbytheself-alignedplanarTechnologywhichreducetheconductionloss,improveswitchingperformanceandenhancetheavalancheenergy.ThepackageformisTO-220F.WhichaccordswiththeRoHSstandard.2FeaturesFastSwitchingLowOnResistance(Rdson0.45Ω)LowGateCharge(Typical:61nC)LowReverseTransferCapacitances(Typical:20pF)100%SinglePulseAvalancheEnergyTestThesesiliconN-channelEnhancedVDMOSFETsareobtainedbytheself-alignedplanarTechnologywhichreducetheconductionloss,improveswitchingperformanceandenhancetheavalancheenergy.ThepackageformisTO-220F.WhichaccordswiththeRoHSstandard.2FeaturesFastSwitchingLowOnResistance(Rdson0.45Ω)LowGateCharge(Typical:61nC)LowReverseTransferCapacitances(Typical:20pF)100%SinglePulseAvalancheEnergyTest
Reference PDF :

http://www.fairchildsemi.com/ds/FC/FCP20N60.pdf

http://www.unisonic.com.tw/datasheet/20N60.pdf


2021/04/15 14:50 2021/04/15 14:50
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Filed under MOSFET