Part Number : RJP30E2DPK-M0
Function : Silicon N Channel IGBT / Vce(sat) = 1.7V typ
Package : TO-3PSG Type
Maker : Renesas Electronics
Pinouts :
Description :
1. Trench gate technology (G5H series)
2. Low collector to emitter saturation voltage VCE(sat)= 1.7 V typ
3. High speed switching tf = 150 ns typ
4. Low leak current ICES= 1 μA max
Applications :
High Speed Power Switching
Datasheet PDF Download :
Others datasheet of same file :
RJP30E2DPK, RJP30E2DPK-M0-T0, RJP30E2
