Part Number : RJP30E2DPK-M0

Function : Silicon N Channel IGBT / Vce(sat) = 1.7V typ

Package : TO-3PSG Type

Maker : Renesas Electronics

Pinouts :
RJP30E2DPK-M0 datasheet

Description :

1. Trench gate technology (G5H series)
2. Low collector to emitter saturation voltage  VCE(sat)= 1.7 V typ
3. High speed switching  tf = 150 ns typ
4. Low leak current  ICES= 1 μA max

Applications : 

High Speed Power Switching


Datasheet PDF Download :
RJP30E2DPK-M0 pdf

Others datasheet of same file :

RJP30E2DPK, RJP30E2DPK-M0-T0, RJP30E2

2021/08/07 10:44 2021/08/07 10:44

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