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RJP30E2DPK-M0#T0
Insulated-Gate Bipolar Transistors (IGBT)

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Description

:

1. Trench gate technology (G5H series)
2. Low collector to emitter saturation voltage  VCE(sat)= 1.7 V typ
3. High speed switching  tf = 150 ns typ
4. Low leak current  ICES= 1 μA max

Applications : 

High Speed Power Switching



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