Part Number : P7NA60
Function : 600V, N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Package : TO-220, ISOWATT220
Maker : STMicroelectronics
Image :

Description :
This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on)and gate charge, unequalled ruggedness and superior switching performance.
Features
1. TYPICAL RDS(on) = 0.92 W
2. ± 30V GATE TO SOURCE VOLTAGE RATING
3. 100% AVALANCHE TESTED
4. REPETITIVE AVALANCHE DATA AT 100oC
5. LOW INTRINSIC CAPACITANCES
6. GATE GHARGE MINIMIZED
7. REDUCED THRESHOLD VOLTAGE SPREAD
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 600 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 7.2 A
4. Total Power Dissipation : Pd = 125 W
5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -65 to +150 °C
Applications :
1. HIGH CURRENT, HIGH SPEED SWITCHING
2. SWITCH MODE POWERSUPPLIES (SMPS)
Datasheet PDF Download :
Others datasheet of same file :
P7NA60FI, STP7NA60, STP7NA60FI
