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Description

This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on)and gate charge, unequalled ruggedness and superior switching performance.

Features

1. TYPICAL RDS(on) = 0.92 W

2. ± 30V GATE TO SOURCE VOLTAGE RATING

3. 100% AVALANCHE TESTED

4. REPETITIVE AVALANCHE DATA AT 100oC

5. LOW INTRINSIC CAPACITANCES

6. GATE GHARGE MINIMIZED

7. REDUCED THRESHOLD VOLTAGE SPREAD

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 600 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID =  7.2 A

4. Total Power Dissipation : Pd = 125 W

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -65 to +150 °C

Applications : 

1. HIGH CURRENT, HIGH SPEED SWITCHING

2. SWITCH MODE POWERSUPPLIES (SMPS)