Part Number : K80E08K3

Function :  Field Effect Transistor Silicon N Channel MOSFET

Package : TO-220AB Type

Maker : Toshiba

Pinouts :
K80E08K3 datasheet

Description :

1 E-Bike/UPS/Inverter

2. Low drain−source ON resistance  : RDS (ON)= 7.5 mΩ(typ.)

3. High forward transfer admittance  : |Yfs| = 135 S (typ.)

4. Low leakage current  : IDSS= 10 µA (max) (VDS= 75 V)

5. Enhancement mode  : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 75 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID = 80 A

4. Drain power dissipation : Pd =  200 W

5. Avalanche energy : Ear = 20 mJ

6. Channel temperature : Tch =  175 °C

7. Storage temperature : Tstg = -55 to +175 °C

 


Datasheet PDF Download :
K80E08K3 pdf

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2021/11/12 15:29 2021/11/12 15:29

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