Part Number : K80E08K3
Function : Field Effect Transistor Silicon N Channel MOSFET
Package : TO-220AB Type
Maker : Toshiba
Pinouts : 
Description :
1 E-Bike/UPS/Inverter
2. Low drain−source ON resistance : RDS (ON)= 7.5 mΩ(typ.)
3. High forward transfer admittance : |Yfs| = 135 S (typ.)
4. Low leakage current : IDSS= 10 µA (max) (VDS= 75 V)
5. Enhancement mode : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 75 V
2. Gate to source voltage : VGSS = ± 20 V
3. Drain current : ID = 80 A
4. Drain power dissipation : Pd = 200 W
5. Avalanche energy : Ear = 20 mJ
6. Channel temperature : Tch = 175 °C
7. Storage temperature : Tstg = -55 to +175 °C
Datasheet PDF Download :
Others datasheet of same file : K80E08K-3
