Part Number : K4B4G1646B

Function : 4Gb B-die DDR3 SDRAM

Package : FBGA 96 Type

Maker : Samsung

Image :
K4B4G1646B datasheet

Description :

The 4Gb DDR3 SDRAM B-die is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications.

The chip is designed to comply with the following key DDR3 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset.  All of the control and address inputs are synchronized with a pair of externally supplied differential clocks.

Features :

1. 8-bit pre-fetch

2. Bi-directional Differential Data-Strobe

3. On Die Termination using ODT pin

4. Asynchronous Reset


Datasheet PDF Download :
K4B4G1646B pdf

Others datasheet of same file :

K4B4G1646, K4B4G1646B-HCF8, K4B4G1646B-HCH9, K4B4G1646B-HCK0,


2021/07/16 12:17 2021/07/16 12:17