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Samsung

K4B4G1646B-HCK0

Ddr Dram, 256MX16, 0.225NS, Cmos, PBGA96

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Description

The 4Gb DDR3 SDRAM B-die, K4B4G1646B is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications.

Features

1. Bi-directional Differential Data-Strobe

2. Internal(self) calibration : Internal self calibration through ZQ pin

3. Asynchronous Reset

4. 8 Banks

5. Programmable CAS Latency(posted CAS)

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Related Part Number

K4S561632J  |  K4S561632D

K4B4G1646D  |  K4B4G1646B

K4A60DA  |  K40T1202

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