Part Number : K3570
Function : SWITCHING N-CHANNEL POWER MOSFET, TRANSISTOR
Package : TO-220AB, TO-262, TO-263 Type
Maker : NEC , Renesas Technology
Image : 
Description :
The K3570 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 20 V
2. Gate to source voltage : VGSS = ± 20 V
3. Drain current : ID = 48 A
4. Total Power Dissipation : Pd = 1.5 W
5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C
Features
• 4.5V drive available.
• Low on-state resistance, RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 24 A)
• Low gate charge QG = 23 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 48 A)
• Built-in gate protection diode
• Surface mount device available
Datasheet PDF Download : 
Others datasheet of same file :
2SK3570, 2SK3570-S, 2SK3570-Z, 2SK3570-ZK
