Part Number : K3152
Function : 120V, 10A, N-Ch, MOSFET, Transistor
Package : TO–220FM
Maker : Hitachi , Renesas Electronics
Pinouts : 
Description :
Silicon N Channel MOSFET
Features :
• Low on-resistance : RDS= 100 mΩtyp.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
• High Speed Power Switching
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 120 V
2. Gate to source voltage : VGSS = ± 20 V
3. Drain current : ID = 10 A
4. Channel dissipation : Pch = 25 W
5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C
Datasheet PDF Download : 
Others datasheet of same file : 2SK3152
